IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
www.vishay.com
Power MOSFET
Vishay Siliconix
PRODUCT SUMMARY
V DS (V)
R DS(on) (Max.) ( ? )
Q g (Max.) (nC)
Q gs (nC)
Q gd (nC)
Configuration
V GS = 10 V
600
14
2.7
8.1
Single
7.0
FEATURES
? Low Gate Charge Q g Results in Simple Drive
Requirement
? Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness
? Fully Characterized Capacitance and
Avalanche Voltage and Current
? Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
D
APPLICATIONS
DPAK
IPAK
? Switch Mode Power Supply (SMPS)
(TO-252)
D
D
(TO-251)
G
? Uninterruptible Power Supply
? Power Factor Correction
TYPICAL SMPS TOPOLOGIES
G
S
G
D S
S
? Low Power Single Transistor Flyback
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and
Halogen-free
Lead (Pb)-free
DPAK (TO-252)
SiHFR1N60A-GE3
IRFR1N60APbF
SiHFR1N60A-E3
DPAK (TO-252)
SiHFR1N60ATRL-GE3 a
IRFR1N60ATRLPbF a
SiHFR1N60ATL-E3 a
DPAK (TO-252)
SiHFR1N60ATR-GE3 a
IRFR1N60ATRPbF a
SiHFR1N60AT-E3 a
DPAK (TO-252)
SiHFR1N60ATRR-GE3 a
IRFR1N60ATRRPbF a
SiHFR1N60ATR-E3 a
IPAK (TO-251)
SiHFU1N60A-GE3
IRFU1N60APbF
SiHFU1N60A-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
600
± 30
UNIT
V
Continuous Drain Current
V GS at 10 V
T C = 25 °C
T C = 100 °C
I D
1.4
0.89
A
Pulsed Drain Current a
I DM
5.6
Linear Derating Factor
0.28
W/°C
Single Pulse Avalanche
Energy b
E AS
93
mJ
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
I AR
E AR
1.4
3.6
A
mJ
Maximum Power Dissipation
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d
T C = 25 °C
for 10 s
P D
dV/dt
T J , T stg
36
3.8
- 55 to + 150
300
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T J = 25 °C, L = 95 mH, R g = 25 ? , I AS = 1.4 A (see fig. 12).
c. I SD ? 1.4 A, dI/dt ? 180 A/μs, V DD ? V DS , T J ? 150 °C.
d. 1.6 mm from case.
S13-0171-Rev. D, 04-Feb-13
1
Document Number: 91267
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
IRFR220TRLPBF MOSFET N-CH 200V 4.8A DPAK
IRFR2407TRRPBF MOSFET N-CH 75V 42A DPAK
IRFR2905ZTRRPBF MOSFET N-CH 55V 42A DPAK
IRFR310TRLPBF MOSFET N-CH 400V 1.7A DPAK
IRFR320TRRPBF MOSFET N-CH 400V 3.1A DPAK
IRFR3412TRPBF MOSFET N-CH 100V 48A DPAK
IRFR3418TRPBF MOSFET N-CH 80V 70A DPAK
IRFR3504TRPBF MOSFET N-CH 40V 30A DPAK
相关代理商/技术参数
IRFR210 功能描述:MOSFET N-Chan 200V 2.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFR210A 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 2.7A I(D) | TO-252AA
IRFR210B 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET
IRFR210BTF 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFR210BTF_FP001 功能描述:MOSFET 200V N-Ch B-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFR210BTM 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
IRFR210BTM_FP001 功能描述:MOSFET 200V N-Ch B-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFR210BTMFP001 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET N-CH 200V 2.7A 3-Pin(2+Tab) DPAK T/R 制造商:Fairchild Semiconductor 功能描述:Trans MOSFET N-CH 200V 2.7A 3-Pin(2+Tab) DPAK T/R